A group at LANL participated at the CRP for "Atomic Data For Heavy Element Impurities in Fusion Reactors" and produced atomic data sets for silicon.
The data sets are available for level energies and statistical weights of fine-structure levels of the ground and excited configurations, oscillator strengths and electron-impact excitation cross-sections, photo-ionization and electron-impact ionization cross-sections among the levels
FLYCHK rate coefficients [cm3/s] of direct collisional ionization(ci), excitation autoionization(ea), radiative recombination(rr) and dielectronic recombination rates(dr) of each ion are calculated as a function of temperature[eV] for plasma modeling applications. The radiative cooling coefficients per charge state per electron density [eV-cm3/s] for each ion are also listed for line radiation (bb) and recombination radiation (bf). For a radiative cooling rate, one should multiply by electron density[cm-3] and the density of the charge state[cm-3].
Note that all caclulations are done at Ne=1cm-3.
References FLYCHK: Generalized population kinetics and spectral model for rapid spectroscopic analysis for all elements, H.-K. Chung, M.H. Chen, W.L. Morgan, Y. Ralchenko and R.W. Lee, High Energy Density Physics, Volume 1, Issue 1, December 2005, Pages 3-12